Abstract
To improve the thermal stability between aluminide and stainless steel substrate and obtain thermodynamically stable phase of alpha-Al2O3, a new Cr2O3/Al2O3 bipolar oxide barrier was proposed, in which metallic Al was sputtered on the preoxidation coating of electroplated chromium and then oxidizing by oxygen plasma. It was found that Cr2O3 film exhibits P-type semiconducting properties while Al2O3 acts as N-type. Hydrogen discharging plasma was used to simulate the in-pile hydrogen permeation. Raman spectra and atomic force microscopy (AFM) were employed to analyze phase structure and surface morphology. Electrochemical impedance spectroscopy and Mott–Schottky were utilized to qualitatively evaluate effective thickness and the integrity for the oxide film. The depth profile and surface chemical states of involving elements were analyzed by auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), respectively. The result shows that Cr2O3/Al2O3 bipolar oxides have improved hydrogen permeation resistance and would be a potential candidate for barrier application.
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