Abstract
A systematic study on the hydrogen passivation of nonradiative centers in InAs quantum dot’s grown on GaAs substrates is presented. The samples used in this study were grown by molecular beam epitaxy. The structures contain an InxGa1−xAs insertion layer between the InAs quantum dots layer and the GaAs cap layer. The thickness and In concentration of the InxGa1−xAs are varied to achieve the emission wavelength at 1.3 μm. The samples after the H2 plasma treatment show a significant increase of the photoluminescence intensity. The experimental results show that the quality of the InAs quantum dot structures does not degrade after the hydrogen (H2) plasma treatments. The enhancement of the photoluminescence intensity from the InAs quantum dots is thought to be due to the passivation of nonradiative centers like defects in the structures. High resolution x-ray diffraction rocking curves are used to correlate photoluminescence results.
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