Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation

Abstract

Hydrogen passivation of phosphorus (P) donors and defects in P-doped silicon nanowires (SiNWs) were investigated by electron spin resonance (ESR) at 4.2 K. P doping was performed during the synthesis of SiNWs by laser ablation. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by detection of an ESR signal with a g-value of 1.998, which corresponds to conduction electrons in crystalline Si. ESR signals related to defects in surface oxide layer and at interface between surface oxide and crystalline Si core were observed. These P donors and the defects were partially passivated by hydrogen and oxygen atoms as seen in bulk Si.