Abstract
We study the effect of hydrogen passivation on AlxGa1−xAs grown by liquid-phase epitaxy (LPE) on semi-insulating GaAs. Using surface photovoltage (SPV) spectroscopy and Hall measurements we investigate the effect of hydrogenation on AlxGa1−xAs epilayers with electron concentrations in the range 1016–1017cm−3. We measure the minority carrier diffusion length in the as-grown AlxGa1−xAs epilayers to be in the range 0.1–0.8 μm and to increase significantly upon hydrogenation. Hydrogen passivation of interface states at the heterojunction is demonstrated for epilayers with low carrier concentration. We apply the result from the SPV measurements to speculate on the band bending at the heterojunction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
