Abstract
This paper reports a simple procedure to create a temporary hydrogen‐terminated surface with a surface recombination velocity down to 25 cm s−1 on 1 Ohm‐cm (100) oriented silicon, and remains below 50 cm s−1 for 30 min. The method is robust, uses common semiconductor chemicals, is performed at low temperature (<80 °C) and results in a sample free of dangerous chemicals. This enables measurement of the bulk lifetime of a semiconductor, an essential property for minority carrier‐based devices, without the requirement of a passivating dielectric. While several methods exist to passivate a silicon surface, they either require: dangerous chemicals; processing steps that may change the bulk lifetime, such as high temperature; or are not compatible with standard characterisation techniques. This approach avoids all these issues.
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