Abstract
Hydrogen (deuterium) passivation effects on carbon dangling bond defects accompanying a nearby hydrogen atom (H1′) in boron-doped CVD homoepitaxial diamond films were investigated by electron paramagnetic resonance (EPR). Deuterium was incorporated into the films using microwave deuterium plasma at 673 K for 22 h. Incorporation of deuterium was confirmed by the passivation of boron acceptors. From the comparison of the EPR signal intensity before and after the deuterium plasma exposure, it was revealed that H1′ could not be passivated by the present condition. From these, the high stability of H1′ was indicated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
