Abstract
Hydrogen (deuterium) passivation effects on carbon dangling bond defects accompanying a nearby hydrogen atom (H1′) in boron-doped CVD homoepitaxial diamond films were investigated by electron paramagnetic resonance (EPR). Deuterium was incorporated into the films using microwave deuterium plasma at 673 K for 22 h. Incorporation of deuterium was confirmed by the passivation of boron acceptors. From the comparison of the EPR signal intensity before and after the deuterium plasma exposure, it was revealed that H1′ could not be passivated by the present condition. From these, the high stability of H1′ was indicated.
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