Abstract
Soft sputter etch cleaning of p-type silicon (self bias range 50–150 V) causes hydrogen passivation of boron acceptors over a depth range in the order of 1 μm. Annealing at 200°C reactivates the boron dopants. Assuming hydrogen diffusion in the RTA temperature range 155–175°C we derive a hydrogen diffusion coefficient which is in good agreement with values known from literature. The diffusion activation energy obtained is 0.65 ev. Mobility measurements show an increase of mobility after sputter etching, proving that passivation and not compensation is causing the effective B-concentration reduction.
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