Abstract
AbstractGaAs and AlAs layers grown by CBE and doped with either 12C or 13C have been passivated with hydrogen or deuterium. Infrared absorption lines due to hydrogen stretch modes, symmetric A1 modes and “carbon-like” E modes of H-CAs and D-CAs pairs have been assigned for both isotopes in both hosts. Comparisons have been made with new ab initio local density functional theory and simple harmonic models. Anticrossing behaviour is found for the two types of coupled E modes in the two hosts. The dynamics of the H-CAs centre are very similar in GaAs and AlAs.
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