Abstract
We have investigated the behavior of atomic hydrogen (or deuterium) introduced by plasma in highly doped GaInAs:Zn epitaxial layers. Different experimental techniques have been used: secondary-ion mass spectrometry (SIMS) profiling, electronic transport measurements, and infrared absorption spectroscopy. After hydrogenation the concentration of free holes is drastically reduced. SIMS profiles follow erfc functions. This corresponds to weak hydrogen-dopant interactions. This weakness is confirmed by the annealing experiments from which a low dissociation energy can be estimated.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
