Abstract
GaAs samples treated in a hydrogen plasma have been studied by Raman spectroscopy. In addition to the known Raman line at 3912cm−1 of H2 trapped at the interstitial TGa site surrounded by Ga neighbors, two new Raman signals at 4043 and 4112cm−1 have been observed at room temperature. The 4043cm−1 line is assigned to H2 trapped at the interstitial TAs site with As closest neighbors and the 4112cm−1 line is associated with H2 trapped in voids formed by the hydrogen plasma. Para-H2 trapped at the interstitial TGa site is shown to be unstable against irradiation with the band-gap light at room temperature and can be observed only at temperatures below 120K.
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