Hydrogen Ion Implantation Induced Cutting Behavior Variation in Plunge Cutting of the Monocrystalline Silicon

Abstract

In this study, surface modification of monocrystalline silicon with two doses of hydrogen ion implantation and the plunge cutting process were conducted to explore the influence of hydrogen ions on the cutting behavior of silicon. The results show that ion implantation is capable of deteriorating or improving the machinability of silicon, depending on the implantation dose. More cleavages and a reduction of critical depth of cut (CDoC) were observed for the silicon with a low implantation dose in the cutting direction of in comparison to bare silicon, while no cleavage and an increase of CDoC were achieved after implantation with a high dose in the same cutting direction. Besides, the ductile cutting and thrust forces of the silicon with the low dose are larger than the bare silicon, but the forces are significantly reduced for the silicon after the high dose of implantation. The variation of the cutting forces is due to the different required stresses to overcome ductile and fracture deformation of silicon.