Abstract
A strong and systematic enhancement of the quasi-2D exciton photoluminescence in a variety of GaSb/AlSb multi-quantum well (MQW) structures, exposed to a low-energy hydrogen ion-gun treatment, is reported. Changes in the luminescence of the underlying GaAs substrate shows that hydrogen penetration through the entire MQW is warranted. The general behavior is indicative of an efficient passivation of nonradiative recombination centers either in the bulk of GaSb or at interfaces.
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