Abstract
discharges are shown to be universal etchants for III–V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At low dc self bias (−100 V) and low pressure (1 mTorr), etch rates for all III–V materials of >2000 Å · min−1 are possible for high HI percentages in the discharges, whereas rates greater than 1 μm · min−1are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with . Auger electron spectroscopy reveals residue‐free, stoichiometric surfaces after dry etching in this mixture. As a result, photoluminescent intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near‐surface carrier concentration due to hydrogen passivation effects are also negligible with mixtures in comparison to dry etching.
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