Abstract
IR and EPR studies of hydrogen interactions with defects in silicon implanted with protons and deuterons were carried out. An analysis of temperature dependence of Si–H local mode anharmonicity, using isotope substitution of H by D, revealed that anharmonicity is sensitive to the environment of a Si–H dipole. This enables to separate Si–H modes between H atoms in the vicinity of vacancy or Si interstitial conglomerates and to construct models for H-related complexes. It is shown that the 2107, 2122cm−1 doublet may be assigned to V6H12, which can serve as nucleus of {111} platelets. Mechanisms of H interactions with ring hexavacancy and Si-B3 interstitial defect are considered and tentative models for a new Si-AA17 EPR center and for H-related shallow donor suggested.
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