Abstract
Abstract The interaction between hydrogen and Pd/SiO 2 /Si structures has been investigated in this research. Palladium (Pd) films n -type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO 2 /Si structure increased more than 20 times within 1.4 s at room temperature during the hydrogen exposure. Our comparison results between the surface I – V characteristic of Pd/SiO 2 /Si and Pd/Al 2 O 3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO 2 /Si. Further comparison results between the surface I – V characteristic of Pd/SiO 2 /Si and Pd/Si reveal that the interfacial layer is the inversion layer ( p -type) of the rectifying junction.
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