Abstract
Interaction mechanism of hydrogen with GaN metal–insulator–semiconductor (MIS) diodes is investigated, focusing on the metal/semiconductor interfaces. For MIS Pt-GaN diodes with a SiO2 dielectric, the current–voltage (I–V) characteristics reveal that hydrogen changes the conduction mechanisms from Fowler–Nordheim tunneling to Poole–Frenkel emission. In sharp contrast, Pt-SixNy-GaN diodes exhibit Poole–Frenkel emission in nitrogen and do not show any change in the conduction mechanism upon exposure to hydrogen. The capacitance–voltage (C–V) study suggests that the work function change of the Schottky metal is not responsible mechanism for the hydrogen sensitivity.
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