Abstract
Using elastic recoil detection analysis and low energy electron diffraction we have investigated the adsorption process of hydrogen on the Si(111)- 3 × 3 -Ag surface. We find that (1) room temperature adsorption of atomic hydrogen induces a structure transformation from the Si(111)- 3 × 3 -Ag to Si(111)-1 × 1-Ag(H) structures, (2) a saturation coverage of hydrogen is 1.5 monolayer, which almost coincides with the one on a clean 7 × 7 surface, and (3) thermal desorption of hydrogen from the ordered 1 × 1-Ag(H) surface results in the recovery of the original 3 × 3 -Ag surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
