Abstract
Low-temperature hydrogen-assisted clusterization of aluminum impurity in silicon has been studied. It was found that hydrogen can decrease the diffusion barrier of the Al atom and initiate the migration of Al atoms at 180–200 K. As a result, an interstitial aluminum pair formation takes place in H-implanted silicon. The implantation with a dose ⩾1×10 16/cm 2 causes formation of the clusters containing more than two aluminum atoms.
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