Abstract
Dielectric-enhanced oxide superlattices that comprise Ba 0.6 Sr 0.4 TiO 3 (BST) 6 nm/SrTi0 3 (STO) 6 nm bilayers with 10 periods were grown epitaxially on Nb-doped STO(100) substrates. The lattice strain enhanced the dielectric properties and tunability of the as-deposited BST/STO superlattice. However, forming gas annealing degraded the electrical properties of the BST/STO superlattice. This change can be attributed to a loss of oxygen from the oxide films and the incorporation of hydrogen atoms into the lattice of oxides during the forming gas annealing. Subsequent oxygen-recovery annealing slightly improves the electrical characteristics of the superlattice because the largest possible number of hydrogen atoms was eliminated from the superlattice.
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