Abstract
Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
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