Abstract
Abstract In proton bombarded InP single crystals the incorporation behaviour of different hydrogen isotopes is studied in relation to implantation induced radiation defects. Investigations of the fluence dependence (D = 1016-1018 cm−2), of the depth profile and of the annealing behaviour (T an = 300–1000 K) of hydrogen incorporation and of damage density indicate that only a small fraction of the implanted hydrogen is chemically bonded to host lattice atoms. These bonded hydrogen atoms saturate dangling bonds at defect sites.
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