Abstract
Silicon oxynitride films with O/N ratios ranging between 0 and 1 have been oxidized in dry and wet ambients at 1000°C for times ranging from 0.5 up to 9 h. Since it is believed that hydrogen plays a crucial role in the oxidation of silicon oxynitrides the H depth distribution in the oxide/(oxy)nitride layer structures was investigated. For the analysis we applied high energy ion beam methods, viz. nuclear reaction analysis and elastic recoil detection. The hydrogen depth profiles are characterized by a hydrogen pile-up at the oxide/(oxy)nitride interface; the H concentrations in the oxide as well as in the remaining oxynitrides are below 1 at%. In this paper we report the amount of H in the interfacial region ( H int) as a function of the oxidation parameters. H int increases with increasing O/N and with increasing H 2O/O 2 gas-phase ratio up to H 2O/O 2 = 75/25. At low O/N ratios, H int increases with oxidation time, whereas at large O/N values it decreases. The origin of the H pile-up is briefly discussed.
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