Abstract
In the present study, platinum decorated silicon carbide (Pt/SiC) nanoballs (NBs) were directly grown on Ag coated porous Si substrates via DC/RF magnetron sputtering. Porous Si substrates were prepared by the metal-assisted chemical etching process at room temperature. The structural and morphological properties of as-grown SiC nanoballs (NBs) were studied using various techniques such as X-ray diffraction (XRD), Raman spectroscopy and field scanning electron microscopy (FESEM) respectively. Hydrogen gas sensing properties along with the sensing mechanism of Pt/SiC nanoball-based sensor within low detection limit (5–1000 ppm) at the high operating temperature range (30–480 °C) were investigated in detail. The sensor exhibits high sensing response (44.48%) with very fast response time (15 s) toward 100 ppm hydrogen gas at 330 °C. These above results suggest the feasibility of Pt decorated SiC nanoballs for highly sensitive and selective hydrogen gas sensor at the high operating temperature and harsh environment conditions.
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