Abstract
A novel H2 gas sensor based on a SnO2 nanostructure was operated at room temperature (RT) (25°C). The SnO2 nanostructure was grown on Al2O3 substrates by a sol–gel spin coating method. The structural characteristics, surface morphology, and gas sensing properties of the SnO2 nanostructure were investigated. Thin film annealing at 500°C produced a high-quality SnO2 nanostructure with a crystallite size of 33.98 nm. A metal–semiconductor–metal gas sensor was fabricated using the SnO2 nanostructure and palladium metal. The gas sensor exhibited a sensitivity of 2570% to 1000 ppm H2 gas at RT. The sensing measurements for H2 gas at different temperatures (RT to 125°C) were repeatable␣for 50 min. Sensor sensitivity was tested under different H2 concentrations (150 ppm, 250 ppm, 375 ppm, 500 ppm, and 1000 ppm) at different operating temperatures. Adding glycerin to the sol solution increased the porosity of the SnO2 nanostructure surface, which increased the adsorption/desorption of gas molecules which leads to the high sensitivity of the sensor. Therefore, this H2 gas sensor is a suitable␣portable␣RT gas sensor.
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