Abstract
Oxide perovskites are proposed as photoelectrodes for the hydrogen evolution reaction(HER) in alkaline solutions. The cubic perovskite BaSnO3 can be used as a photoelectrode due to the edge position of conduction band, which is lower than the reduction potential. However, since it has a wide band gap of 3.1 eV, it is limited to use energy of a long wavelength including visible light. In this research, we investigated photoelectrochemical characteristics of BaSnO3 thin film deposited by Pulsed laser deposition(PLD) with promoting oxygen vacancy. The HER performance was enhanced due to band gap adjusted oxygen vacancy concentration. Furthermore, Electrochemical Impedance Spectroscopy(EIS) was measured to confirm surface charge resistance and charge transport. Thus, this study introduces that BaSnO3-δ/p-Si can be an efficient electrode for HER.
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