Abstract
The incorporation of hydrogen into the p-type Czhochralski (Cz) silicon by a plasma results in an enhanced thermal donor (TD) formation at temperatures around 400°C. Counter doping by the TDs and a rapid p–n junction formation occur in the p-type Cz Si. It is shown that the controlled TDs formation can be used for the low-temperature production of device structures: p–n junctions, p–n–p structures and structures with gradient doping. The characterization of the samples was done by the depth resolved spreading resistance probe (SRP) analysis. A kinetic model for the analysis of the hydrogen-enhanced TDs formation in the as-grown as well as in the Cz Si samples with denuded zone is developed. It can be concluded, that the controlled hydrogen enhanced TDs formation can be used as an alternative low-cost, low-temperature doping method, which might be favorable for active defect-engineering in the Cz Si.
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