Abstract
Hydrogen supported thermal donor (TD) formation was observed in oxygen enriched high resistive float zone (FZ) silicon being used as substrates for detectors in the Large Hadron Collider (CERN). TD formation was provided by a “2-step-process”, consisting of a plasma hydrogenation at 250 °C (60 min) and subsequent annealing at 450 °C in air (typically for 20–30 min). The samples were analyzed by spreading resistance probe (SRP), C( V) and DLTS measurements. Doping by TDs in the oxygen enriched layers of FZ Si samples might be a promising method for the creation of very deep (∼ 100 μm) electrical field gradients for an improved performance of Si radiation detectors.
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