Abstract
The average dislocation velocity in hydrogenated Ni3Al single crystals was directly measured as a function of resolved shear stress (RSS) at room temperature (293 K) by the etch-pit technique. It was found that the dislocation velocity with hydrogen is about 5–25 times faster than that without hydrogen for the same RSS, and hydrogen decreases activation energy for dislocation motion in Ni3Al single crystals. The reason hydrogen can enhance dislocation velocity in this compound is briefly discussed. These preliminary results quantitatively provide the first evidence of hydrogen-enhancing dislocation mobility in Ni3Al material.
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