Abstract
SiGe-on-insulator (SGOI) materials were fabricated by thermal oxidation of SiGe layers on SOI wafers. H ions were implanted into a SiGe layer before oxidation and the effects of implantation of H ions during oxidation were studied. The implantation of H ions decreased the oxidation rate of the SiGe layer during oxidation. After thermal oxidation, SGOI materials with a high Ge fraction were obtained. The results show that the implantation of H ions can decrease the loss of Ge in the SiGe layer during oxidation and H ions diffused out of the SiGe layer after oxidation.
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