Abstract
The effect of hydrogen on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors was investigated by capacitance–voltage (C–V) measurements. The results showed that hydrogen exposure shifted the C–V curves towards the negative bias direction, indicating that hydrogen was incorporated into Al2O3 as a positive charge. Dry air exposure shifted the C–V curves back towards the positive bias direction more quickly than nitrogen did, which suggests that Pt has a catalytic function. Moreover, applying a negative bias to Pt resulted in faster shifts of the C–V curves back towards the positive bias direction. These results may suggest that hydrogen plays a critical role in post-metallization annealing.
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