Abstract

Desorption of hydrogen from 6H-SiC(0001) has been systematically studied during graphitization. The surface structure was controlled by thermal desorption of silicon at high temperatures in an ultrahigh vacuum and was characterized by low energy diffraction and Auger electron spectroscopy. The temperature of the dominant peak in the hydrogen desorption spectrum was found to shift from 670 to 490 K between 3×3 and 3×3R30° reconstructions. The shift can be assigned to a change of the adsorption sites from silicon to carbon.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.