Abstract
The H-atom initiated decomposition of SiH/sub 4/ at room temperature produces mainly H/sub 2/, Si/sub 2/H/sub 6/, and a solid deposit with trace amounts of Si/sub 3/H/sub 8/ and Si/sub 4/H/sub 10/ appearing later as secondary products. The initial reaction appears to be nearly completely described by a gas-phase conversion of SiH/sub 4/ to Si/sub 2/H/sub 6/ and H/sub 2/ but the secondary gas-phase reactions are strongly influenced by surface reactions involving silicon hydride polymer. Detailed studies of the H--D distribution in the disilane product of an equimolar mixture of SiH/sub 4/ and SiD/sub 4/ show conclusively that the disilane is formed by insertion reactions of SiH/sub 2/, SiHD, and SiD/sub 2/ radicals into SiH/sub 4/ and SiD/sub 4/ and that combination of SiH/sub 3/ and SiD/sub 3/ radicals play virtually no role.
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