Abstract
Hydrogen adsorption on the c(4×4), (2×4), (2×6), and (4×2) reconstructions of GaAs (001) have been characterized by internal-reflection infrared spectroscopy. The infrared spectra contain up to 15 bands due to the stretching vibrations of arsenic hydrides (2150–1950 cm−1), terminal gallium hydrides (1950–1800 cm−1), and bridging gallium hydrides (1800–950 cm−1). These features arise from hydrogen adsorption on arsenic and gallium dimers, and second-layer arsenic and gallium atoms. The large number of peaks observed indicates that the surface atoms exist in a variety of different chemical environments.
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