Abstract
We investigated the interactions of gaseous atomic hydrogen H(g) with Si(100) pre-etched in an aqueous HF solution. Temperature-programmed desorption and evolution mass spectrometric analyses revealed three distinct H2 peaks, including one from the crystalline bulk. Compared with pristine Si(100), HF-treated samples exhibited enhanced and suppressed H(g) absorption at low and high H(g) doses, respectively. While the rates of surface reactions are controlled by the substrate temperature and local atomic structure, a delicate balance among kinetically competing surface reactions is found to determine the rate of direct H(g) absorption by Si(100).
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