Hydrofluoric acid etching of ultra thin silicon oxide film fabricated by high purity ozone

Abstract

Hydrofluoric acid etching indicates that ultra thin silicon dioxide film made by high purity ozone on Si(100) 2 × 1 between 300 and 700 °C has the same film density as that of thermally grown silicon dioxide for device use on Si(100) at 750 °C in a wet environment. Rate of oxide film growth > 6 Å on Si(100) 2 × 1 by ozone is, however, much lower at the substrate temperature between 300 and 500 °C than at 700 °C. This is indicating different kinetics and mechanism of oxide film growth > 6 Å by high purity ozone.