Abstract
Terahertz (THz) oscillations in n[Formula: see text]nn[Formula: see text] In[Formula: see text]Ga[Formula: see text]As diodes have been simulated with the use of a time-dependent hydrodynamic model. Under proper biased voltage and doping concentration, THz self-oscillations show up. The current self-oscillations originate from the formation and propagation of electric field domains in In[Formula: see text]Ga[Formula: see text]As diodes. The In[Formula: see text]Ga[Formula: see text]As device studied here may be presented as an excellent candidate as a solid-state THz source for monolithic integration.
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