Abstract
The first hydrodynamic RF noise model for CMOS devices including a consistent set of quantum correction and mobility models for the inversion layer is presented. Good agreement of simulations and recent noise measurements for deep sub-micron devices is obtained. In the case of classical and non-classical CMOS devices with channel lengths of 50 nm it is found that the drain excess noise factor is still below two and the increase in drain noise for short channel devices is therefore not as dramatic as previously reported.
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