Abstract
An extended hydrodynamic model self-consistently coupled to the 2D Schrödinger and 3D Poisson equations is introduced, to describe charge transport in Silicon Nanowires. It is been formulated by taking the moments of the multisubband Boltzmann equation, and the closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle. The low-field mobility for a Gate-All-Around in a SiNW transistor has been evaluated.
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