Hydride Vapor-Phase Epitaxy of a Semipolar AlN(10$$\bar {1}$$2) Layer on a Nanostructured Si(100) Substrate

Abstract

We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a V-groove nanostructured surface where the angle between the sloped nanoridge surface and Si(100) plane amounts to 47°. It is established that metalorganic hydride vapor-phase epitaxy (HVPE) on this substrate leads to the formation of semipolar AlN(10$$\bar {1}$$2) layers having an X-ray rocking curve with a minimum FWHM value of ωθ ~ 60 arcmin. Raman spectra of this epilayer display additional peaks related to A1(TO) and E1(TO) phonons in contrast to the spectrum of a polar AlN(0001) layer containing an additional A1(LO) peak.