Hydride vapor phase epitaxy of GaN on self-organized patterned graphene masks

Abstract

Self-organized patterned graphene masks were produced from graphene decomposition to realize epitaxial lateral overgrowth on a metal organic chemical vapor deposition-GaN/sapphire substrate. Graphene was decomposed with hydrogen and liquid gallium assistance. Graphene completely decomposed without ammonia protection. Liquid gallium was produced from GaN decomposition, which was suppressed by ammonia. Dot- or hexagonal-patterned graphene masks were obtained under optimized decomposition conditions. Thermal stress was greater than the bonding energy of van der Waals force between GaN and graphene; thus, GaN template separated from sapphire during cooling down after hydride vapor phase epitaxy lateral overgrowth.