Abstract
The initial stages and subsequent growth of GaN on sapphire using ZnO buffer layers is reported for the hydride vapor phase epitaxy technique. A high gas-phase supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent growth step was employed under conditions that favor a high lateral growth rate in order to promote the coalescence of the initial islands and provide optimal material properties. The specific gas-phase mole fractions of the GaCl and NH3 at the growth front control both the vertical and lateral growth rates. The use of a two-step growth process in the GaN growth leads to a controlled morphology and improved material properties for GaN materials when grown with a ZnO buffer layer. An optimized set of growth conditions, utilizing this two-step process, was found to also improve the growth directly on sapphire without a ZnO buffer layer.
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More From: Applied Physics A: Materials Science & Processing
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