Abstract
We have calculated the temperature dependence of various thermodynamic and transport properties for the [ital N]=2 single-band insulating phase of the Anderson lattice Hamiltonian using a slave-boson approach. The conduction band was assumed to be parabolic with a spherical Brillouin-zone boundary. The transport properties were calculated assuming an impurity scattering mechanism and using a relaxation-time approximation. Our calculations demonstrate how many-body effects (on-site Coulomb repulsion) cause an otherwise wide-gap material to behave as a very-narrow-gap material with temperature dependence in qualitative agreement with the experimental data for Ce[sub 3]Bi[sub 4]Pt[sub 3]. This calculation supports the view that this material is an indirect-gap semiconductor.
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