Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms

Abstract

Voltage waveforms associated with the electrical asymmetry effect (EAE) have the potential to be used in the deposition of the silicon-based film, since they are expected to decouple ion energy and flux at the wafer surface, and further facilitate control of the process. In this study, a one-dimensional fluid/electron Monte Carlo hybrid model is employed to examine the EAE in a capacitively coupled argon-silane discharge, encompassing both amplitude asymmetry effect (AAE) and slope asymmetry effect (SAE). In the case of AAE, with the increasing pressure, the discharge electronegativity gradually intensifies, in conjunction with a transition of the electron heating mode from α to drift-ambipolar, a reduction of the absolute value of the DC self-bias voltage, and a decrease in Ar+ content, with an increase in SiH3 + content. For SAE, the trend in the discharge characteristics with the increasing pressure is similar to that for AAE, but the details are different. In SAE, the electronegativity and bulk electric field are much enhanced, resulting in higher content of high-energy electrons and Ar+ in the bulk. In addition, the absolute value of the self-bias is lower, but shows a fewer decline with the increasing pressure. The deposition rate is lower in SAE, due to the lower electron heating efficiency. However, larger voltage drop difference between two sheaths leads to a wider range of ion energy modulation at higher pressures. This study systematically investigates and compares Ar/SiH4 discharges driven by two electrically asymmetric voltage waveforms across various parameters including electron dynamics, ion and neutral transport properties, and deposition rates, with the aim of providing valuable insights and a reference for industrial applications.