Hybrid silica and thin-film lithium niobate waveguides and Y-junctions

Abstract

Silica (SiO2) strip-loaded waveguides and Y-junctions on lithium niobate (LN) thin film were designed, fabricated and experimentally investigated. We first studied the optical confinement factor distribution in strip-loaded waveguides. The Simulations showed that most of the power (>82%) was confined in the LN layer, and the dimensions of the SiO2 loading strip had a relatively small influence on the optical confinement factor distribution. The SiO2 film was deposited with the magnetron sputtering method. The deposited SiO2 layer approached stoichiometric SiO2, and a smooth surface was obtained. A group of waveguides with widths of 2–5 μm were fabricated using lift-off technology. The 2 μm-wide waveguide displayed low propagation losses of 0.2 dB/cm for the quasi-TE (q-TE) mode and 0.8 dB/cm for the quasi-TM (q-TM) mode at the wavelength of 1550 nm. Y-junctions with small sizes were designed and fabricated based on the low-loss waveguides. The transmission could reach 70–80%, and the splitting ratio maintained at a stable level near 1:1 for the Y-junctions S1 and S4. The low-loss strip-loaded waveguides and Y-junctions offer the possibility of combining SiO2 and LN materials for integrated optics. Additional high-performance photonic devices and circuits using this method are expected in the future.