Abstract
A hybrid single electron transistor/MOSFET (SETMOS) circuit cell architecture, working as a three-terminal stand-alone device for obtaining SET-like Coulomb blockade oscillations, along with a high current drive ( /spl sim/ μA), is proposed. SETMOS characteristics are successfully predicted by analytical models at subambient (-100 /spl deg/C to -150 /spl deg/C) temperature with realistic device parameters. The effect of bias voltages and current on the SETMOS Coulomb blockade oscillations characteristics is critically discussed. It is also demonstrated that the SETMOS can be converted into a unique quasi-periodic negative differential resistance (NDR) device by short-circuiting its gate and drain terminals.
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