Abstract

In this paper, a novel InP-based evanescently coupled hybrid plasmonic uni-traveling carrier photodetector (ECHP-UTC-PD) integrated with a hybrid plasmonic waveguide is proposed at 1.55 μm wavelength. It has been shown that the corrugated structure of nano-metals on the PD absorption layer highly increases the amount of light coupled from the input waveguide to the absorption layer and hence increases the PD responsivity. In order to achieve maximum responsivity, the structure of the PD has been optimized using the Particle Swarm Optimization (PSO) method. The frequency response of the proposed PD was determined using transit time simulation and output scattering parameter (S22) by extracting the small-signal equivalent circuit. Simulation results show that this PD has the responsivity of 0.8 A/W and the 3 dB-bandwidth of 200 GHz for a PD length of 12.5 μm, the width of 650 nm, and the InGaAs absorption layer thickness of 100 nm. The proposed PD can be monolithically integrated with generic InP-based devices.

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