Abstract

We present an analytical model based on hydrodynamic equations and a pseudo-two-dimensional Poisson equation to study the response of a nanometric field-effect transistor channel in the THz domain. This model allows to study different kinds of external excitations of plasma modes and different geometries. We calculate the two first-order responses of the drain voltage or current, which are of peculiar interest in the perspective of THz wave generation and detection and THz electronics. Even at room temperature, each responses present resonances at the eigenfrequencies of the hybrid plasma modes sustained in the channel.

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