Abstract
In this letter, hybrid-phase microstructural ITO-stabilized ZnO thin films, which were capped by silane-sourced or tetraethyl-orthosilicate-sourced plasma-enhanced chemical vapor deposition (PECVD) SiO2 layers, were found to present remarkably different resistivity variation after O2 annealing treatment. Besides hydrogen-related factors, the silicon-doping phenomenon along with the silane-sourced PECVD process was also responsible for the durable low-resistivity state of the hybrid-phase microstructural ITO-stabilized ZnO thin films. Via a combination of differentiatedPECVD andO2 annealingprocesses, the self-aligned coplanar TFTs were fabricated, and they exhibited good electrical characteristics with an average field-effect mobility of 19.56 cm2/Vs, and a subthreshold swing of 105 mV/decade, as well as robust stability against gate-bias stress.
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