Abstract
Abstract Perovskite films are an emerging class of semiconductors with considerable potential for using inactive layer that has been extensively studied in solar cells and light emitting diode fields. In this work, we propose a new application of perovskite materials as a charge generation layer (CGL) in the field of optoelectronic devices. Here, perovskite material CsPbBr3 and n-type material fullerene carbon 60 (C60) are accurately controlled by a crystal oscillator in the vacuum thermal evaporation chamber. The prepared perovskite material possesses the properties required as an ideal charge generation layer material, making it suitable as a CGL. The efficiency of tandem organic light emitting diode with the C60/CsPbBr3 CGL is significantly improved, a value of 31.2 cd/A, which is 2.1 times higher than that of the single-emitter device. This achievement stems from the proposed thermal evaporation procedure avoids some side effects caused by dopants in traditional CGL, simultaneously provides high luminescence and balanced charge injection.
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