Hybrid Organic/Inorganic Transistors Utilizing an Indenofluorene Derivative as Emitter

Abstract

The molecular semiconductors are widely used on a great diversity of electronic and optoelectronic devices. The incorporation of molecular semiconductors to semiconductor- metal-semiconductor transistors (SMS) simplified the required production technology and, more importantly, allowed the construction of devices in vertical architecture with nearly ideal common-base current gains. In this work we present the results of the construction of SMS transistors utilizing an organic semiconductor, an indenofluorene derivative (DPIF), as emitter. The base and collector are respectively tin (Sn) and p- doped silicon (Si-p). The devices were electrically characterized at three-terminal measurements and were operated in common-base and common-emitter modes, revealing a permeable- base characteristic. The base thickness was varied in order to investigate the influence on the device performance. High current gain (~1) was obtained in common-base mode, and in common-emitter mode a current gain of 120 was achieved for a base thickness of 23 nm.